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Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
FEATURES
* Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance
PHP10N60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 9.6 A RDS(ON) 0.75
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN 1 2 3 case gate drain source drain DESCRIPTION
SOT78 (TO220AB)
tab drain
123 gate source drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 C to 150C Tj = 25 C to 150C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 600 600 30 9.6 6.1 38 167 150 UNIT V V V A A A W C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy CONDITIONS MIN. MAX. 813 28 9.6 UNIT mJ mJ A Unclamped inductive load, IAS = 9.6 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V Repetitive avalanche energy1 IAR = 9.6 A; tp = 1 s; Tj prior to avalanche = 25C; RGS = 50 ; VGS = 10 V Repetitive and non-repetitive avalanche current
1 pulse width and repetition rate limited by Tj max. August 1998 1 Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. -
PHP10N60E
TYP. MAX. UNIT 60 0.75 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage gfs Forward transconductance IDSS Drain-source leakage current V(BR)DSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 600 2.0 4 TYP. MAX. UNIT 0.1 0.7 3.0 5.5 2 80 10 130 8 60 20 55 160 70 3.5 4.5 7.5 1500 200 112 0.75 4.0 100 1000 200 150 10 85 V %/K V S A A nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VGS = 10 V; ID = 4.4 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 4.4 A VDS = 600 V; VGS = 0 V VDS = 480 V; VGS = 0 V; Tj = 125 C Gate-source leakage current VGS = 30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 8.7 A; VDD = 480 V; VGS = 10 V VDD = 300 V; RD = 33 ; RG = 5.6
Measured from tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25C Tmb = 25C IS = 9.6 A; VGS = 0 V IS = 9.6 A; VGS = 0 V; dI/dt = 100 A/s MIN. TYP. MAX. UNIT 740 9 9.6 38 1.2 A A V ns C
August 1998
2
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PHP10N60E
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".
August 1998
3
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PHP10N60E
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1998
4
Rev 1.000

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